JPH0436368B2 - - Google Patents

Info

Publication number
JPH0436368B2
JPH0436368B2 JP57022744A JP2274482A JPH0436368B2 JP H0436368 B2 JPH0436368 B2 JP H0436368B2 JP 57022744 A JP57022744 A JP 57022744A JP 2274482 A JP2274482 A JP 2274482A JP H0436368 B2 JPH0436368 B2 JP H0436368B2
Authority
JP
Japan
Prior art keywords
display device
electrode
thin film
image display
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57022744A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58140781A (ja
Inventor
Makoto Matsui
Junichi Oowada
Yasuhiro Shiraki
Eiichi Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57022744A priority Critical patent/JPS58140781A/ja
Priority to EP83100476A priority patent/EP0086349B1/en
Priority to DE8383100476T priority patent/DE3363314D1/de
Priority to CA000420258A priority patent/CA1207420A/en
Priority to KR1019830000620A priority patent/KR860000229B1/ko
Publication of JPS58140781A publication Critical patent/JPS58140781A/ja
Priority to US07/115,616 priority patent/US4904989A/en
Publication of JPH0436368B2 publication Critical patent/JPH0436368B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
JP57022744A 1982-02-17 1982-02-17 画像表示装置 Granted JPS58140781A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP57022744A JPS58140781A (ja) 1982-02-17 1982-02-17 画像表示装置
EP83100476A EP0086349B1 (en) 1982-02-17 1983-01-20 Display device
DE8383100476T DE3363314D1 (en) 1982-02-17 1983-01-20 Display device
CA000420258A CA1207420A (en) 1982-02-17 1983-01-26 Display device
KR1019830000620A KR860000229B1 (ko) 1982-02-17 1983-02-16 화상 표시장치
US07/115,616 US4904989A (en) 1982-02-17 1987-10-30 Display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57022744A JPS58140781A (ja) 1982-02-17 1982-02-17 画像表示装置

Publications (2)

Publication Number Publication Date
JPS58140781A JPS58140781A (ja) 1983-08-20
JPH0436368B2 true JPH0436368B2 (en]) 1992-06-16

Family

ID=12091206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57022744A Granted JPS58140781A (ja) 1982-02-17 1982-02-17 画像表示装置

Country Status (6)

Country Link
US (1) US4904989A (en])
EP (1) EP0086349B1 (en])
JP (1) JPS58140781A (en])
KR (1) KR860000229B1 (en])
CA (1) CA1207420A (en])
DE (1) DE3363314D1 (en])

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60227235A (ja) * 1984-04-26 1985-11-12 Canon Inc 画像形成装置
US4689116A (en) * 1984-10-17 1987-08-25 L'etat Francais Represented By The Minister Of Ptt (Centre National D'etudes Des Telecommunications) Process for fabricating electronic circuits based on thin-film transistors and capacitors
FR2571913B1 (fr) * 1984-10-17 1986-12-26 Richard Joseph Ecran d'affichage a matrice active a double transistor d'adressage
US4688896A (en) * 1985-03-04 1987-08-25 General Electric Company Information conversion device with auxiliary address lines for enhancing manufacturing yield
FR2585167B1 (fr) * 1985-07-19 1993-05-07 Gen Electric Structures conductrices redondantes pour affichages a cristaux liquides commandes par des transistors a effet de champ en couche mince
US4819038A (en) * 1986-12-22 1989-04-04 Ibm Corporation TFT array for liquid crystal displays allowing in-process testing
JP2769830B2 (ja) * 1989-01-23 1998-06-25 藤森工業株式会社 液晶セルの製造法
DE69013275T2 (de) * 1989-08-21 1995-05-04 Sharp Kk Flüssigkristall-Anzeigevorrichtung.
US5194974A (en) * 1989-08-21 1993-03-16 Sharp Kabushiki Kaisha Non-flicker liquid crystal display with capacitive charge storage
US5212426A (en) * 1991-01-24 1993-05-18 Motorola, Inc. Integrally controlled field emission flat display device
US5075595A (en) * 1991-01-24 1991-12-24 Motorola, Inc. Field emission device with vertically integrated active control
US5471225A (en) * 1993-04-28 1995-11-28 Dell Usa, L.P. Liquid crystal display with integrated frame buffer
JPH0887034A (ja) * 1994-09-16 1996-04-02 Toshiba Corp 液晶表示装置およびその製造方法
KR100205259B1 (ko) * 1996-03-04 1999-07-01 구자홍 액티브매트릭스 액정디스플레이의 구동회로
TW578130B (en) * 1997-02-17 2004-03-01 Seiko Epson Corp Display unit
US6462722B1 (en) 1997-02-17 2002-10-08 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
US6175345B1 (en) * 1997-06-02 2001-01-16 Canon Kabushiki Kaisha Electroluminescence device, electroluminescence apparatus, and production methods thereof
JP3042493B2 (ja) 1998-05-13 2000-05-15 日本電気株式会社 液晶表示装置およびその駆動方法
JP2005166687A (ja) * 1998-12-01 2005-06-23 Sanyo Electric Co Ltd カラーｅｌ表示装置
JP2005209656A (ja) * 1998-12-01 2005-08-04 Sanyo Electric Co Ltd カラーｅｌ表示装置
JP2000227771A (ja) 1998-12-01 2000-08-15 Sanyo Electric Co Ltd カラーｅｌ表示装置
JP2000227770A (ja) 1998-12-01 2000-08-15 Sanyo Electric Co Ltd カラーｅｌ表示装置
TW468269B (en) * 1999-01-28 2001-12-11 Semiconductor Energy Lab Serial-to-parallel conversion circuit, and semiconductor display device employing the same
JP4637315B2 (ja) * 1999-02-24 2011-02-23 株式会社半導体エネルギー研究所 表示装置
TW483287B (en) * 1999-06-21 2002-04-11 Semiconductor Energy Lab EL display device, driving method thereof, and electronic equipment provided with the EL display device
US6750835B2 (en) * 1999-12-27 2004-06-15 Semiconductor Energy Laboratory Co., Ltd. Image display device and driving method thereof
KR100592273B1 (ko) * 2004-05-20 2006-06-22 삼성에스디아이 주식회사 평판 디스플레이 장치

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3512041A (en) * 1966-09-26 1970-05-12 Olivetti & Co Spa Display device comprising a matrix of selection electrodes,field effect transistors and luminescent elements
US4008484A (en) * 1968-04-04 1977-02-15 Fujitsu Ltd. Semiconductor device having multilayered electrode structure
US3862360A (en) * 1973-04-18 1975-01-21 Hughes Aircraft Co Liquid crystal display system with integrated signal storage circuitry
US3824003A (en) * 1973-05-07 1974-07-16 Hughes Aircraft Co Liquid crystal display panel
JPS556233B2 (en]) * 1974-08-07 1980-02-14
US4062626A (en) * 1974-09-20 1977-12-13 Hitachi, Ltd. Liquid crystal display device
JPS5351985A (en) * 1976-10-22 1978-05-11 Hitachi Ltd Semiconductor wiring constitution
US4103297A (en) * 1976-12-20 1978-07-25 Hughes Aircraft Company Light-insensitive matrix addressed liquid crystal display system
JPS6030956B2 (ja) * 1977-01-10 1985-07-19 松下電器産業株式会社 カラ−画像表示装置の製造方法
US4115799A (en) * 1977-01-26 1978-09-19 Westinghouse Electric Corp. Thin film copper transition between aluminum and indium copper films
DE2927824A1 (de) * 1978-07-12 1980-01-31 Vlsi Technology Res Ass Halbleitervorrichtungen und ihre herstellung
JPS55159493A (en) * 1979-05-30 1980-12-11 Suwa Seikosha Kk Liquid crystal face iimage display unit
DE2926874A1 (de) * 1979-07-03 1981-01-22 Siemens Ag Verfahren zum herstellen von niederohmigen, diffundierten bereichen bei der silizium-gate-technologie
GB2056739B (en) * 1979-07-30 1984-03-21 Sharp Kk Segmented type liquid crystal display and driving method thereof
US4431271A (en) * 1979-09-06 1984-02-14 Canon Kabushiki Kaisha Display device with a thin film transistor and storage condenser
JPS5739422A (en) * 1980-08-15 1982-03-04 Hitachi Ltd V-i converter
JPS57112027A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of semiconductor device
JPS5910988A (ja) * 1982-07-12 1984-01-20 ホシデン株式会社 カラ−液晶表示器
US4642620A (en) * 1982-09-27 1987-02-10 Citizen Watch Company Limited Matrix display device

Also Published As

Publication number Publication date
KR860000229B1 (ko) 1986-03-15
EP0086349B1 (en) 1986-05-07
JPS58140781A (ja) 1983-08-20
DE3363314D1 (en) 1986-06-12
US4904989A (en) 1990-02-27
CA1207420A (en) 1986-07-08
KR840003869A (ko) 1984-10-04
EP0086349A1 (en) 1983-08-24

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